GP1S51VJ000F datasheet

Маркировка

GP1S51VJ000F
Производитель

Sharp Microelectronics
Описание

Sharp Microelectronics GP1S51VJ000F Current - Collector (ic) (max): 20mA Current - Dc Forward (if): 50mA Mounting Type: Through Hole Operating Temperature: -25?°C ~ 85?°C Output Configuration: Phototransistor Package / Case: PCB Mount Response Time: 3?µs, 4?µs Sensing Distance: 0.118" (3mm) Sensing Method: Transmissive Series: - Type: Unamplified Voltage - Collector Emitter Breakdown (max): 35V Product Category: Optical Switches, Transmissive, Phototransistor Output RoHS: yes Output Device: Phototransistor Slot Width: 3 mm Aperture Width: 0.5 mm Collector- Emitter Voltage VCEO Max: 35 V Maximum Collector Current: 20 mA Forward Current: 50 mA Maximum Operating Temperature: + 85 C Minimum Operating Temperature: - 25 C Fall Time: 20 us Power Dissipation: 75 mW Rise Time: 15 us Factory Pack Quantity: 100 Other Names: 425-1970-5
Количество страниц

6 шт.
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64,40 KB